Welcome! Sign in | Join free
Quote Call: +281-899-8096
Home > Linecard General Semiconductor Inc > 3N207

3N207

Part Number: 3N207
Manufacturer: General Semiconductor Inc
Category: Unclassified
Description: TRANSISTOR,MOSFET,P-CHANNEL,25V V(BR)DSS,100MA I(D),TO-76

Technical Characteristics

Manufacturer General Semiconductor Inc
Description TRANSISTOR,MOSFET,P-CHANNEL,25V V(BR)DSS,100MA I(D),TO-76
Status Discontinued
Package N/A
Pin Count N/A
Lead Free Lead free / RoHS Compliant
Category Unclassified
Family
Series N/A

Looking for 3N207? Jitcomp is an American eletronic components independent distributor,we mainly offer obsolete, hard to find, discontinued integrated circuits and long lead time electronic components, buy 3N207 at jitcomp will send from American warehouse 7-10 day fast shipping to worldwide, all 3N207 sale on our web are come from from formal manufacturers or other distributors, to guarantee their quality we also provide a 60-day warranty on every order, trading 3N207 with JITCOMP is your best choose.

3N207 Related Parts

  • 2N5534 | API Electronics Group | TRANSISTOR,BJT,NPN,75V V(BR)CEO,10A I(C),TO-210AC
  • 2N5474 | American Microsemiconductor | TRANSISTOR,JFET,P-CHANNEL,500UA I(DSS),TO-72
  • 2N4251 | American Microsemiconductor | TRANSISTOR,BJT,NPN,10V V(BR)CEO,100MA I(C),TO-46
  • 2N3830 | American Microsemiconductor | TRANSISTOR,BJT,NPN,50V V(BR)CEO,1.2A I(C),TO-5
  • 2N5482 | American Microsemiconductor | TRANSISTOR,BJT,NPN,30V V(BR)CEO,350MA I(C),STX-8
  • 2N3343 | American Microsemiconductor | TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-5
  • 2N3367 | American Microsemiconductor | TRANSISTOR,JFET,N-CHANNEL,50UA I(DSS),TO-18
  • 2N3222 | American Microsemiconductor | TRANSISTOR,BJT,NPN,60V V(BR)CEO,2A I(C),STR-10
  • 2N4920 | American Microsemiconductor | TRANSISTOR,BJT,PNP,80V V(BR)CEO,1A I(C),TO-126
  • 2N2551 | American Microsemiconductor | TRANSISTOR,BJT,PNP,150V V(BR)CEO,1A I(C),TO-5
  • 2N3635S | American Microsemiconductor | TRANSISTOR,BJT,PNP,140V V(BR)CEO,1A I(C),TO-39
  • 2N3629 | API Electronics Group | TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-210AC
  • 2N340 | American Microsemiconductor | TRANSISTOR,BJT,PNP,85V V(BR)CEO,60MA I(C),TO-11
  • 2N3432 | American Microsemiconductor | TRANSISTOR,BJT,NPN,200V V(BR)CEO,5A I(C),STR-1/4
  • 2N343A | American Microsemiconductor | TRANSISTOR,BJT,PNP,60V V(BR)CEO,60MA I(C),TO-11
  • 2N3488 | API Electronics Group | TRANSISTOR,BJT,NPN,80V V(BR)CEO,7.5A I(C),TO-210AC
  • 2N2944A | American Microsemiconductor | TRANSISTOR,BJT,PNP,10V V(BR)CEO,100MA I(C),TO-46
  • 2N1230 | American Microsemiconductor | TRANSISTOR,BJT,PNP,35V V(BR)CEO,TO-5
  • BF505 | NAS Elektronische Halbleiter GMBH | TRANSISTOR,BJT,NPN,25V V(BR)CEO,20MA I(C),TO-92
  • SN74TVC16222ADGVR | Texas Instruments | IC,VOLTAGE CLAMP,MOS,TSSOP,48PIN,PLASTIC
  • CBT3126D | Philips | IC,BUS SWITCH,SOP,14PIN,PLASTIC
  • RC1608J823CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,82K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608JR24CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,240m Ohms,320mWV,5% +/-Tol,-250,250ppm TC,0603 Case
  • RC1608J822CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,8.2K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608JR16CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,160m Ohms,320mWV,5% +/-Tol,800ppm TC,0603 Case
  • RC2012F1401CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,1.4K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • RC1608J755CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,7.5M Ohms,50WV,5% +/-Tol,-300,300ppm TC,0603 Case
  • RC1608J395CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,3.9M Ohms,50WV,5% +/-Tol,-300,300ppm TC,0603 Case
  • RC1608J114CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,110K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608G64R9CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,64.9 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608G5R11AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,5.11 Ohms,50WV,2% +/-Tol,-200,300ppm TC,0603 Case
  • RC1608GR62CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,620m Ohms,320mWV,2% +/-Tol,-250,250ppm TC,0603 Case
  • RC1608G51R1CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,51.1 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608G4641CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,4.64K Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608G4420CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,442 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608G3R83CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,3.83 Ohms,50WV,2% +/-Tol,-200,300ppm TC,0603 Case
  • RC2012F26R7CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,26.7 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • RC2012F360CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,36 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • RC2012F105CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,1M Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • RC2012F2551CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,2.55K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case

Request a Quote

First Name*
Last Name*
Company*
Email*
Country*
Phone*