EEE1VA330WAP
| Part Number: |
EEE1VA330WAP |
| Manufacturer: |
Panasonic Electronic Devices Co Ltd |
| Category: |
Unclassified |
| Description: |
Cap,Al2O3,33uF,35VDC,20% -Tol,20% +Tol |
Technical Characteristics
| Manufacturer |
Panasonic Electronic Devices Co Ltd |
| Description |
Cap,Al2O3,33uF,35VDC,20% -Tol,20% +Tol |
| Status |
Active |
| Package |
N/A |
| Pin Count |
N/A |
| Lead Free |
Details |
| Category |
Unclassified |
| Family |
|
| Series |
N/A |
Looking for EEE1VA330WAP? Jitcomp is an American eletronic components independent distributor,we mainly offer obsolete, hard to find, discontinued integrated circuits and long lead time electronic components, buy EEE1VA330WAP at jitcomp will send from American warehouse 7-10 day fast shipping to worldwide, all EEE1VA330WAP sale on our web are come from from formal manufacturers or other distributors, to guarantee their quality we also provide a 60-day warranty on every order, trading EEE1VA330WAP with JITCOMP is your best choose.
EEE1VA330WAP Related Parts
- EEEFK0J332AQ | Panasonic Electronic Devices Co Ltd | Cap,Al2O3,3.3mF,6.3VDC,20% -Tol,20% +Tol
- 2SJ549(L) | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,12A I(D),TO-262VAR
- 2SJ548 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-220VAR
- 2SJ543 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,20A I(D),TO-220AB
- 2SJ542 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,18A I(D),TO-220AB
- 2SJ541 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-220AB
- 2SJ526 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,12A I(D),SOT-186VAR
- 2SJ518 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,2A I(D),SOT-89
- 2SJ511 | Toshiba | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),SOT-89
- 2SJ508 | Toshiba | TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,1A I(D),SOT-89
- 2SJ507 | Toshiba | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,1A I(D),TO-92VAR
- 2SJ496 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,5A I(D),TO-92VAR
- 2SJ492-S | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,20A I(D),TO-262AA
- 2SJ489 | Shindengen | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),TO-252
- 2SJ488 | Shindengen | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,5A I(D),TO-252
- 2SJ48 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,120V V(BR)DSS,7A I(D),TO-3
- 2SJ484 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),SC-62
- 2SJ480 | Sanyo Electric Co Ltd, Semiconductor Company | TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,300MA I(D),TO-236AB
- 2SJ479L | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,30A I(D),TO-220VAR
- 2SJ476-01L | Fuji Electric | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,25A I(D),TO-262VAR
- 2SJ472-01L | Fuji Electric | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,5A I(D),TO-251
- 2SJ469 | Sanyo Electric Co Ltd, Semiconductor Company | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,5A I(D),SO
- 2SJ468 | Sanyo Electric Co Ltd, Semiconductor Company | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4A I(D),SO
- 2SJ467 | Sanyo Electric Co Ltd, Semiconductor Company | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,8A I(D),TO-251
- RC1608G8252CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,82.5K Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G9090CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,909 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
- RC1608J202CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,2K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G8R25AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,8.25 Ohms,50WV,2% +/-Tol,-200,300ppm TC,0603 Case
- RC2012F49R9CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,49.9 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F3160CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,316 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F4640CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,464 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F2R7CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,2.7 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F434CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,430K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- MS27467T25B35PA | Defense Supply Center Columbus | MIL-C-38999, Series I, 500 Cycle Contact
- M54HC590K | STMicroelectronics | IC,COUNTER,UP,8-BIT BINARY,CMOS, RAD HARD,FP,16PIN,CERAMIC
- MAX5580BEUP-T | Maxim Integrated Products | IC,D/A CONVERTER,QUAD,12-BIT,BICMOS,TSSOP,20PIN
- MS3106E22-18P | Defense Supply Center Columbus | MIL-C-5015, Solder Contact
- MAX631BESA | Maxim Integrated Products | IC,SMPS CONTROLLER,VOLTAGE-MODE,CMOS,SOP,8PIN,PLASTIC
- MUAA8K80M-20B388C | MUSIC Semiconductors Corporation | IC,CAM,8KX80,CMOS,BGA,388PIN,PLASTIC
- MAX6397ZATA-T | Maxim Integrated Products | IC,OVERVOLTAGE PROTECTOR,BICMOS,LLCC,8PIN,PLASTIC