RC2012G1333CS
| Part Number: |
RC2012G1333CS |
| Manufacturer: |
Samsung Electronics |
| Category: |
Unclassified |
| Description: |
Res,SMT,Ruthenium Oxide,133K Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case |
Technical Characteristics
| Manufacturer |
Samsung Electronics |
| Description |
Res,SMT,Ruthenium Oxide,133K Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case |
| Status |
Active |
| Package |
N/A |
| Pin Count |
N/A |
| Lead Free |
|
| Category |
Unclassified |
| Family |
|
| Series |
N/A |
Looking for RC2012G1333CS? Jitcomp is an American eletronic components independent distributor,we mainly offer obsolete, hard to find, discontinued integrated circuits and long lead time electronic components, buy RC2012G1333CS at jitcomp will send from American warehouse 7-10 day fast shipping to worldwide, all RC2012G1333CS sale on our web are come from from formal manufacturers or other distributors, to guarantee their quality we also provide a 60-day warranty on every order, trading RC2012G1333CS with JITCOMP is your best choose.
RC2012G1333CS Related Parts
- RC2012G1871CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,1.87K Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case
- RC2012F9090CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,909 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012G1803AS | Samsung Electronics | Res,SMT,Metal Oxide,180K Ohms,50WV,2% +/-Tol,-100,100ppm TC,0805 Case
- RC2012G1150CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,115 Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case
- RC2012F8872CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,88.7K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012G1052CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,10.5K Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case
- RC2012F8661CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,8.66K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F821CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,820 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012FR10AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,100m Ohms,350mWV,1% +/-Tol,800ppm TC,0805 Case
- RC2012F6813CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,681K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F624CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,620K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F9763CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,976K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F563CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,56K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F5620CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,562 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012G34R8AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,34.8 Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case
- RC2012G2370AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,237 Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case
- RC2012G3162CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,31.6K Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case
- RC2012G30R1AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,30.1 Ohms,150WV,2% +/-Tol,-100,100ppm TC,08005 Case
- B45296R1337M419 | EPCOS | Cap,Tantalum / Ta2O5,330uF,6.3VDC,20% -Tol,20% +Tol
- BUK456-200B | North American Philips, Discrete Products Div | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,17A I(D),TO-220AB
- BYM26G | Philips | RECTIFIER DIODE,1.4KV V(RRM),SOD-64
- B43508B2108M000 | TDK-EPC Corp | Cap,Al2O3,1mF,200VDC,20% -Tol,20% +Tol
- BU206 | American Microsemiconductor | TRANSISTOR,BJT,NPN,800V V(BR)CEO,2.5A I(C),TO-3
- B772Y | Jiangsu Changjiang Electronics Technology | TRANSISTOR,BJT,PNP,30V V(BR)CEO,3A I(C),TO-126
- BY429 | Bradley Semiconductor Corp | RECTIFIER DIODE,800V V(RRM),STR-10
- BUF405AFP | STMicroelectronics | TRANSISTOR,BJT,NPN,450V V(BR)CEO,7.5A I(C),TO-220AB(FP)
- B80K230 | Infineon Technologies | METAL-OXIDE VARISTOR (MOV),230V V(RMS),100KA I(TM),M:HL115HD7.0
- BUK9614-55T/R | Philips | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,68A I(D),TO-263AB
- BQ26501PWRG4 | Texas Instruments | IC,BATTERY MANAGEMENT,TSSOP,8PIN,PLASTIC
- BLM21BD421SH1B | Murata | Chip Bead,Ferrite
- BF587 | NAS Elektronische Halbleiter GMBH | TRANSISTOR,BJT,NPN,350V V(BR)CEO,50MA I(C),TO-202AB
- BC856AR | Micronas Semiconductor | TRANSISTOR,BJT,PNP,65V V(BR)CEO,100MA I(C),TO-236
- BUF640 | Telefunken Microelectronics GMBH | TRANSISTOR,BJT,NPN,400V V(BR)CEO,6A I(C),TO-220AB
- BL-XF0361 | YELLOW STONE | SURFACE-MOUNT/AXIAL LED LAMP,RED,WATER CLEAR,LED-8D
- BT8215EPF | Brooktree | IC,CELL BUFFER,CMOS,QFP,100PIN,PLASTIC
- B45010E3379M406 | Kemet Electronics | Cap,Tantalum / Ta2O5,330uF,10VDC,20% -Tol,20% +Tol
- BAT15-05W | Infineon Technologies | MIXER DIODE,SOT-323
- BPV23F | Telefunken Microelectronics GMBH | INFRARED-OPTIMIZED PHOTODIODE,600MA/W RESPONSIVITY,LED-7B
- BLM03BB220SN1B | Murata | Chip Bead,Ferrite
- B25AC40 | International Rectifier | THYRISTOR MODULE,TRIAC