2N722A
| Part Number: |
2N722A |
| Manufacturer: |
American Microsemiconductor |
| Category: |
Unclassified |
| Description: |
TRANSISTOR,BJT,PNP,35V V(BR)CEO,TO-46 |
Technical Characteristics
| Manufacturer |
American Microsemiconductor |
| Description |
TRANSISTOR,BJT,PNP,35V V(BR)CEO,TO-46 |
| Status |
Historical |
| Package |
N/A |
| Pin Count |
N/A |
| Lead Free |
Contains lead / RoHS non-compliant |
| Category |
Unclassified |
| Family |
|
| Series |
N/A |
Looking for 2N722A? Jitcomp is an American eletronic components independent distributor,we mainly offer obsolete, hard to find, discontinued integrated circuits and long lead time electronic components, buy 2N722A at jitcomp will send from American warehouse 7-10 day fast shipping to worldwide, all 2N722A sale on our web are come from from formal manufacturers or other distributors, to guarantee their quality we also provide a 60-day warranty on every order, trading 2N722A with JITCOMP is your best choose.
2N722A Related Parts
- 3N207 | General Semiconductor Inc | TRANSISTOR,MOSFET,P-CHANNEL,25V V(BR)DSS,100MA I(D),TO-76
- 2N5534 | API Electronics Group | TRANSISTOR,BJT,NPN,75V V(BR)CEO,10A I(C),TO-210AC
- 2N5474 | American Microsemiconductor | TRANSISTOR,JFET,P-CHANNEL,500UA I(DSS),TO-72
- 2N4251 | American Microsemiconductor | TRANSISTOR,BJT,NPN,10V V(BR)CEO,100MA I(C),TO-46
- 2N3830 | American Microsemiconductor | TRANSISTOR,BJT,NPN,50V V(BR)CEO,1.2A I(C),TO-5
- 2N5482 | American Microsemiconductor | TRANSISTOR,BJT,NPN,30V V(BR)CEO,350MA I(C),STX-8
- 2N3343 | American Microsemiconductor | TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-5
- 2N3367 | American Microsemiconductor | TRANSISTOR,JFET,N-CHANNEL,50UA I(DSS),TO-18
- 2N3222 | American Microsemiconductor | TRANSISTOR,BJT,NPN,60V V(BR)CEO,2A I(C),STR-10
- 2N4920 | American Microsemiconductor | TRANSISTOR,BJT,PNP,80V V(BR)CEO,1A I(C),TO-126
- 2N2551 | American Microsemiconductor | TRANSISTOR,BJT,PNP,150V V(BR)CEO,1A I(C),TO-5
- 2N3635S | American Microsemiconductor | TRANSISTOR,BJT,PNP,140V V(BR)CEO,1A I(C),TO-39
- 2N3629 | API Electronics Group | TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-210AC
- 2N340 | American Microsemiconductor | TRANSISTOR,BJT,PNP,85V V(BR)CEO,60MA I(C),TO-11
- 2N3432 | American Microsemiconductor | TRANSISTOR,BJT,NPN,200V V(BR)CEO,5A I(C),STR-1/4
- 2N343A | American Microsemiconductor | TRANSISTOR,BJT,PNP,60V V(BR)CEO,60MA I(C),TO-11
- 2N3488 | API Electronics Group | TRANSISTOR,BJT,NPN,80V V(BR)CEO,7.5A I(C),TO-210AC
- 2N2944A | American Microsemiconductor | TRANSISTOR,BJT,PNP,10V V(BR)CEO,100MA I(C),TO-46
- 2N1230 | American Microsemiconductor | TRANSISTOR,BJT,PNP,35V V(BR)CEO,TO-5
- BF505 | NAS Elektronische Halbleiter GMBH | TRANSISTOR,BJT,NPN,25V V(BR)CEO,20MA I(C),TO-92
- SN74TVC16222ADGVR | Texas Instruments | IC,VOLTAGE CLAMP,MOS,TSSOP,48PIN,PLASTIC
- CBT3126D | Philips | IC,BUS SWITCH,SOP,14PIN,PLASTIC
- RC1608J823CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,82K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
- RC1608JR24CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,240m Ohms,320mWV,5% +/-Tol,-250,250ppm TC,0603 Case
- RC1608J822CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,8.2K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
- RC1608JR16CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,160m Ohms,320mWV,5% +/-Tol,800ppm TC,0603 Case
- RC2012F1401CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,1.4K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC1608J755CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,7.5M Ohms,50WV,5% +/-Tol,-300,300ppm TC,0603 Case
- RC1608J395CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,3.9M Ohms,50WV,5% +/-Tol,-300,300ppm TC,0603 Case
- RC1608J114CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,110K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G64R9CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,64.9 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G5R11AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,5.11 Ohms,50WV,2% +/-Tol,-200,300ppm TC,0603 Case
- RC1608GR62CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,620m Ohms,320mWV,2% +/-Tol,-250,250ppm TC,0603 Case
- RC1608G51R1CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,51.1 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G4641CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,4.64K Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G4420CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,442 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G3R83CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,3.83 Ohms,50WV,2% +/-Tol,-200,300ppm TC,0603 Case
- RC2012F26R7CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,26.7 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F360CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,36 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC2012F105CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,1M Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case