Welcome! Sign in | Join free
Quote Call: +281-899-8096
Home > Linecard Panasonic Electronic Devices Co Ltd > EEEFK1E222AM

EEEFK1E222AM

Part Number: EEEFK1E222AM
Manufacturer: Panasonic Electronic Devices Co Ltd
Category: Unclassified
Description: Cap,Al2O3,2.2mF,25VDC,20% -Tol,20% +Tol

Technical Characteristics

Manufacturer Panasonic Electronic Devices Co Ltd
Description Cap,Al2O3,2.2mF,25VDC,20% -Tol,20% +Tol
Status Active
Package N/A
Pin Count N/A
Lead Free Details
Category Unclassified
Family
Series N/A

Looking for EEEFK1E222AM? Jitcomp is an American eletronic components independent distributor,we mainly offer obsolete, hard to find, discontinued integrated circuits and long lead time electronic components, buy EEEFK1E222AM at jitcomp will send from American warehouse 7-10 day fast shipping to worldwide, all EEEFK1E222AM sale on our web are come from from formal manufacturers or other distributors, to guarantee their quality we also provide a 60-day warranty on every order, trading EEEFK1E222AM with JITCOMP is your best choose.

EEEFK1E222AM Related Parts

  • EEEFK1A682AM | Panasonic Electronic Devices Co Ltd | Cap,Al2O3,6.8mF,10VDC,20% -Tol,20% +Tol
  • EEE1VA330WAP | Panasonic Electronic Devices Co Ltd | Cap,Al2O3,33uF,35VDC,20% -Tol,20% +Tol
  • EEEFK0J332AQ | Panasonic Electronic Devices Co Ltd | Cap,Al2O3,3.3mF,6.3VDC,20% -Tol,20% +Tol
  • 2SJ549(L) | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,12A I(D),TO-262VAR
  • 2SJ548 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-220VAR
  • 2SJ543 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,20A I(D),TO-220AB
  • 2SJ542 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,18A I(D),TO-220AB
  • 2SJ541 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-220AB
  • 2SJ526 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,12A I(D),SOT-186VAR
  • 2SJ518 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,2A I(D),SOT-89
  • 2SJ511 | Toshiba | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),SOT-89
  • 2SJ508 | Toshiba | TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,1A I(D),SOT-89
  • 2SJ507 | Toshiba | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,1A I(D),TO-92VAR
  • 2SJ496 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,5A I(D),TO-92VAR
  • 2SJ492-S | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,20A I(D),TO-262AA
  • 2SJ489 | Shindengen | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,7A I(D),TO-252
  • 2SJ488 | Shindengen | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,5A I(D),TO-252
  • 2SJ48 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,120V V(BR)DSS,7A I(D),TO-3
  • 2SJ484 | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),SC-62
  • 2SJ480 | Sanyo Electric Co Ltd, Semiconductor Company | TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,300MA I(D),TO-236AB
  • 2SJ479L | Renesas Electronics | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,30A I(D),TO-220VAR
  • 2SJ476-01L | Fuji Electric | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,25A I(D),TO-262VAR
  • 2SJ472-01L | Fuji Electric | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,5A I(D),TO-251
  • 2SJ469 | Sanyo Electric Co Ltd, Semiconductor Company | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,5A I(D),SO
  • 2SJ468 | Sanyo Electric Co Ltd, Semiconductor Company | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4A I(D),SO
  • 2SJ467 | Sanyo Electric Co Ltd, Semiconductor Company | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,8A I(D),TO-251
  • RC1608G8252CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,82.5K Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608G9090CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,909 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608J202CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,2K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
  • RC1608G8R25AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,8.25 Ohms,50WV,2% +/-Tol,-200,300ppm TC,0603 Case
  • RC2012F49R9CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,49.9 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • RC2012F3160CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,316 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • RC2012F4640CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,464 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • RC2012F2R7CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,2.7 Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • RC2012F434CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,430K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
  • MS27467T25B35PA | Defense Supply Center Columbus | MIL-C-38999, Series I, 500 Cycle Contact
  • M54HC590K | STMicroelectronics | IC,COUNTER,UP,8-BIT BINARY,CMOS, RAD HARD,FP,16PIN,CERAMIC
  • MAX5580BEUP-T | Maxim Integrated Products | IC,D/A CONVERTER,QUAD,12-BIT,BICMOS,TSSOP,20PIN
  • MS3106E22-18P | Defense Supply Center Columbus | MIL-C-5015, Solder Contact
  • MAX631BESA | Maxim Integrated Products | IC,SMPS CONTROLLER,VOLTAGE-MODE,CMOS,SOP,8PIN,PLASTIC

Request a Quote

First Name*
Last Name*
Company*
Email*
Country*
Phone*