EPM570GM256I5N
Part Number: |
EPM570GM256I5N |
Manufacturer: |
Altera |
Category: |
Unclassified |
Description: |
IC,COMPLEX-FLASH PLD,440-CELL,8.7NS PROP DELAY,BGA,256PIN,PLASTIC |
Technical Characteristics
Manufacturer |
Altera |
Description |
IC,COMPLEX-FLASH PLD,440-CELL,8.7NS PROP DELAY,BGA,256PIN,PLASTIC |
Status |
Active |
Package |
N/A |
Pin Count |
N/A |
Lead Free |
Details |
Category |
Unclassified |
Family |
|
Series |
N/A |
Looking for EPM570GM256I5N? Jitcomp is an American eletronic components independent distributor,we mainly offer obsolete, hard to find, discontinued integrated circuits and long lead time electronic components, buy EPM570GM256I5N at jitcomp will send from American warehouse 7-10 day fast shipping to worldwide, all EPM570GM256I5N sale on our web are come from from formal manufacturers or other distributors, to guarantee their quality we also provide a 60-day warranty on every order, trading EPM570GM256I5N with JITCOMP is your best choose.
EPM570GM256I5N Related Parts
- EP1S40F1020C6N | Altera | IC,FPGA,41250-CELL,CMOS,BGA,1020PIN,PLASTIC
- EP3SL340H1152I4N | Altera | IC,FPGA,337500-CELL,CMOS,BGA,1152PIN,PLASTIC
- EP1S60B956I7 | Altera | IC,FPGA,57120-CELL,CMOS,BGA,956PIN,PLASTIC
- SN74ALS641A-1DW | Texas Instruments | IC,BUS TRANSCEIVER,SINGLE,8-BIT,ALS-TTL,SOP,20PIN,PLASTIC
- SN75C3221EDB | Texas Instruments | IC,LINE TRANSCEIVER,1 DRIVER,1 RCVR,SSOP,16PIN,PLASTIC
- IDTQS3162233PA | Integrated Device Technology | IC,BUS EXCHANGER,CMOS,TSSOP,56PIN,PLASTIC
- 2N722A | American Microsemiconductor | TRANSISTOR,BJT,PNP,35V V(BR)CEO,TO-46
- 3N207 | General Semiconductor Inc | TRANSISTOR,MOSFET,P-CHANNEL,25V V(BR)DSS,100MA I(D),TO-76
- 2N5534 | API Electronics Group | TRANSISTOR,BJT,NPN,75V V(BR)CEO,10A I(C),TO-210AC
- 2N5474 | American Microsemiconductor | TRANSISTOR,JFET,P-CHANNEL,500UA I(DSS),TO-72
- 2N4251 | American Microsemiconductor | TRANSISTOR,BJT,NPN,10V V(BR)CEO,100MA I(C),TO-46
- 2N3830 | American Microsemiconductor | TRANSISTOR,BJT,NPN,50V V(BR)CEO,1.2A I(C),TO-5
- 2N5482 | American Microsemiconductor | TRANSISTOR,BJT,NPN,30V V(BR)CEO,350MA I(C),STX-8
- 2N3343 | American Microsemiconductor | TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-5
- 2N3367 | American Microsemiconductor | TRANSISTOR,JFET,N-CHANNEL,50UA I(DSS),TO-18
- 2N3222 | American Microsemiconductor | TRANSISTOR,BJT,NPN,60V V(BR)CEO,2A I(C),STR-10
- 2N4920 | American Microsemiconductor | TRANSISTOR,BJT,PNP,80V V(BR)CEO,1A I(C),TO-126
- 2N2551 | American Microsemiconductor | TRANSISTOR,BJT,PNP,150V V(BR)CEO,1A I(C),TO-5
- 2N3635S | American Microsemiconductor | TRANSISTOR,BJT,PNP,140V V(BR)CEO,1A I(C),TO-39
- 2N3629 | API Electronics Group | TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-210AC
- 2N340 | American Microsemiconductor | TRANSISTOR,BJT,PNP,85V V(BR)CEO,60MA I(C),TO-11
- 2N3432 | American Microsemiconductor | TRANSISTOR,BJT,NPN,200V V(BR)CEO,5A I(C),STR-1/4
- 2N343A | American Microsemiconductor | TRANSISTOR,BJT,PNP,60V V(BR)CEO,60MA I(C),TO-11
- 2N3488 | API Electronics Group | TRANSISTOR,BJT,NPN,80V V(BR)CEO,7.5A I(C),TO-210AC
- 2N2944A | American Microsemiconductor | TRANSISTOR,BJT,PNP,10V V(BR)CEO,100MA I(C),TO-46
- 2N1230 | American Microsemiconductor | TRANSISTOR,BJT,PNP,35V V(BR)CEO,TO-5
- BF505 | NAS Elektronische Halbleiter GMBH | TRANSISTOR,BJT,NPN,25V V(BR)CEO,20MA I(C),TO-92
- SN74TVC16222ADGVR | Texas Instruments | IC,VOLTAGE CLAMP,MOS,TSSOP,48PIN,PLASTIC
- CBT3126D | Philips | IC,BUS SWITCH,SOP,14PIN,PLASTIC
- RC1608J823CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,82K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
- RC1608JR24CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,240m Ohms,320mWV,5% +/-Tol,-250,250ppm TC,0603 Case
- RC1608J822CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,8.2K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
- RC1608JR16CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,160m Ohms,320mWV,5% +/-Tol,800ppm TC,0603 Case
- RC2012F1401CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,1.4K Ohms,200WV,1% +/-Tol,-100,100ppm TC,0805 Case
- RC1608J755CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,7.5M Ohms,50WV,5% +/-Tol,-300,300ppm TC,0603 Case
- RC1608J395CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,3.9M Ohms,50WV,5% +/-Tol,-300,300ppm TC,0603 Case
- RC1608J114CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,110K Ohms,50WV,5% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G64R9CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,64.9 Ohms,50WV,2% +/-Tol,-100,100ppm TC,0603 Case
- RC1608G5R11AS | Samsung Electronics | Res,SMT,Ruthenium Oxide,5.11 Ohms,50WV,2% +/-Tol,-200,300ppm TC,0603 Case
- RC1608GR62CS | Samsung Electronics | Res,SMT,Ruthenium Oxide,620m Ohms,320mWV,2% +/-Tol,-250,250ppm TC,0603 Case